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Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode
P-side-up thin-film AlGaInP-based light emitting diodes with direct ohmic contact of an ITO layer with a GaP window layer
Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN - ScienceDirect
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Fast growth of graphene for nitride LED transparent contacts
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Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes
Study of Nano-scale ITO Top Grating of GaN LED | Semantic Scholar
Applied Sciences | Free Full-Text | Improvement of Light Extraction in Deep Ultraviolet GaN Light Emitting Diodes with Mesh P-Contacts | HTML
Semiconductor Today
Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode
Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes | Scientific Reports
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a) Top view of a set of AlGaInP LEDs with GaP-ITO-Ag ODR for planar... | Download Scientific Diagram
Light extraction efficiency enhancement of GaN- based blue LEDs based on ITO/ InxO ohmic contacts with microstructure formed by
a) Schematic of an LED structure with a patterned ITO contact layer.... | Download Scientific Diagram
a) The diagram of ITO-NW networks on vertical LED structure. (b) The... | Download Scientific Diagram
Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth | Scientific Reports
Artificially formed resistive ITO/p-GaN junction to suppress the current spreading and decrease the surface recombination for GaN-based micro-light emitting diodes
Improved electrode performance in gallium nitride LEDs
Current spreading in GaN-based light-emitting diodes
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a) Current–voltage and light output power–current characteristics of... | Download Scientific Diagram
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